Edgars Butanovs*, Jelena Butikova, Aleksejs Zolotarjovs, Boris Polyakov

In recent years, nanowires have been shown to exhibit high photosensitivities, and, therefore are of
interest in a variety of optoelectronic applications, for example, colour-sensitive photodetectors. In this
study, we fabricated two-terminal PbS, In2S3, CdS and ZnSe single-nanowire photoresistor devices and
tested applicability of these materials under the same conditions for colour-sensitive (405 nm, 532 nm
and 660 nm) light detection. Nanowires were grown via atmospheric pressure chemical vapour transport
method, their structure and morphology were characterized by scanning and transmission electron
microscopy (SEM and TEM), X-ray diffraction (XRD), and optical properties were investigated with
photoluminescence (PL) measurements. Single-nanowire photoresistors were fabricated via in situ
nanomanipulations inside SEM, using focused ion beam (FIB) cutting and electron-beam-assisted platinum welding; their current-voltage characteristics and photoresponse values were measured. Applicability of the tested nanowire materials for colour-sensitive light detection is discussed.

Published in Optical Materials

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