Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 single crystals

V. Bondar, L. Grigorjeva, T. Kärner, O. Sidletskiy,
K. Smits, S. Zazubovich, A. Zolotarjovs

Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL
spectra) are investigated in the 4-520 K temperature range for the X-ray irradiated at 4 K, 8
K, or 80 K single crystals of gadolinium and lutetium-gadolinium oxyorthosilicates. The
nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and
Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time,
the TSL glow curves of these materials are measured separately for the electron (intrinsic,
Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow
curve peaks, arising from thermal decay of various electron and hole centers, are identified.
The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters
of the electron and hole traps are calculated.

Journal of Luminescence


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TSL and fractional glow study of Ge-doped α-quartz.

A. Zolatarjovs, A.N. Trukhin, K. Smits, D. Millers

Abstract. Crystalline α-quartz doped with 0.1wt% and 0.9wt% germanium was studied using
TSL and FGT equipment. Sample was chosen because previously it is known that Ge in quartz
is efficient trap for electrons, therefore it could be used for detection of hypothetic self-trapped
hole in α-quartz. However previous investigations of ODMR and TSL shows that in α-quartz
the hole is still mobile and trapping occurs only on defect states. The activation energies for
both TSL peaks are found by fractional glow and Hoogenstraaten method. The TSL
distribution changes depending on Ge concentration and also on irradiation type. The TSL
peaks below 70K in quartz doped with Ge could belong to hole trapped on Ge.

IOP Conference Series: Materials Science and Engineering 49 (2013) 012056


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