Photoluminescence of nominally pure oxidized and fluorinated silica glasses, which have good optical transparency in the optical gap, has been investigated under excitation by excimer lasers. The data are compared with the data for chlorinated silica glass, as well as glass containing OH. The excitation of localized states provides the release and capture of charge carriers, despite the low absorption coefficient. The holes are self-trapped. The recombination in the thermally activated or tunnel process creates luminescence of oxygen-deficient centers. It is concluded that oxidation and fluorination do not change the concentration of localized states, but they change the electronic transitions of the localized states to higher energies. In type III glass with a high OH content, luminescence is suppressed by the presence of hydrogen and appears after irradiation with 7.9 eV photons of the F2 laser. This observation suggests the existence of localized states even in these glasses.
• Photoluminescence of oxidized and fluorinated pure silica glasses was studied.
• optical absorption below 8.1 eV is 1–3 cm-1.
• two bands UV and blue luminescence of ODC was observed.
• UV band decay is slower than 4.5 ns and that of blue band is faster than 10 ms.
• recombination process of luminescence excitation.
Pure silica glass, Localized states, Self-trapped hole, Recombination luminescence, Oxygen deficient centers, Excimer lasers, Time resolved photoluminescence
Published in Journal of Non-Crystalline Solids