A.N. Trukhin, K. Smits , A. Sharakosky , G. Chikvaidze , T.I. Dyuzheva , L.M. Lityagina
It is obtained that, as grown, non-irradiated stishovite single crystals possess a luminescence center.
Three excimer pulsed lasers (KrF, 248 nm; ArF, 193 nm; F2, 157 nm) were used for photoluminescence
(PL) excitation. Two PL bands were observed. One, in UV range with the maximum at 4.770.1 eV with
FWHM equal to 0.9570.1 eV, mainly is seen under ArF laser. Another, in blue range with the maximum
at 370.2 eV with FWHM equal to 0.870.2 eV, is seen under all three lasers. The UV band main fast
component of decay is with time constant t¼1.270.1 ns for the range of temperatures 16–150 K.
The blue band decay possesses fast and slow components. The fast component of the blue band decay is
about 1.2 ns. The slow component of the blue band well corresponds to exponent with time constant
equal to 1771 ms within the temperature range 16–200 K. deviations from exponential decay were
observed as well and explained by influence of nearest interstitial OH groups on the luminescence
center. The UV band was not detected for F2 laser excitation. For the case of KrF laser only a structure
less tail up to 4.6 eV was detected. Both the UV and the blue bands were also found in recombination
process with two components having characteristic time about 1 and 60 ms. For blue band recombination
luminescence decay is lasting to ms range of time with power law decay t1.
For the case of X-ray excitation the luminescence intensity exhibits strong drop down above 100 K.
such an effect does not take place in the case of photoexcitation with lasers. The activation energies for
both cases are different as well. Average value of that is 0.0370.01 eV for the case of X-ray
luminescence and it is 0.1570.05 eV for the case of PL. So, the processes of thermal quenching are
different for these kinds of excitation and, probably, are related to interaction of the luminescence
center with OH groups.
Stishovite crystal irradiated with pulses of electron beam (270 kV, 200 A, 10 ns) demonstrates a
decrease of luminescence intensity excited with X-ray. So, irradiation with electron beam shows on
destruction of luminescent defects.
The nature of luminescence excited in the transparency range of stishovite is ascribed to a defect
existing in the crystal after growth. Similarity of the stishovite luminescence with that of oxygen
deficient silica glass and induced by radiation luminescence of a-quartz crystal presumes similar nature
of centers in those materials.
Journal of Luminescence 131 (2011) 2273–2278
K. Smits , L. Grigorjeva , D. Millers, A. Sarakovskis, J. Grabis, W. Lojkowski
The studies of ZrO2 and yttrium stabilized ZrO2 nanocrystals luminescence as well as yttrium stabilized
single crystal luminescence and induced absorption showed that the intrinsic defects are responsible
for luminescence at room temperature. These defects form a quasi-continuum of states in ZrO2 band
gap and are the origin of the luminescence spectrum dependence on the excitation energy.
Luminescence centers are oxygen vacancies related but not the vacancies themselves. At room
temperature, in ZrO2, deep traps for electrons and holes exist. The oxygen vacancies are proposed to
be the traps for electrons.
Journal of Luminescence 131 (2011) 2058–2062
Anatoly N. Trukhin , Krishjanis Smits, Georg Chikvaidze, Tatiana I. Dyuzheva, Ludmila M. Lityagina
This paper compares the luminescence of different modifications of silicon dioxide – silica glass, -quartz
crystal and dense octahedron structured stishovite crystal. Under x-ray irradiation of pure silica glass and
pure -quartz crystal, only the luminescence of self-trapped exciton (STE) is detected, excitable only in
the range of intrinsic absorption. No STE luminescence was detected in stishovite since, even though its
luminescence is excitable below the optical gap, it could not be ascribed to a self-trapped exciton. Under
ArF laser excitation of pure -quartz crystal, luminescence of a self-trapped exciton was detected under
two-photon excitation. In silica glass and stishovite mono crystal, we spectrally detected mutually similar
luminescences under single-photon excitation of ArF laser. In silica glass, the luminescence of an oxygen
deficient center is presented by the so-called twofold coordinated silicon center (L.N. Skuja et al., Solid
State Commun. 50, 1069 (1984)). This center is modified with an unknown surrounding or localized
states of silica glass (A.N. Trukhin et al., J. Non-Cryst. Solids 248, 40 (1999)). In stishovite, that same
luminescence was ascribed to some defect existing after crystal growth. For -quartz crystal, similar to
silica and stishovite, luminescence could be obtained only by irradiation with a lattice damaging source
such as a dense electron beam at a temperature below 80 K, as well as by neutron or -irradiation at
In spite of a similarity in the luminescence of these three materials (silica glass, stishovite mono crystal and
irradiated -quartz crystal), there are differences that can be explained by the specific characteristics of
these materials. In particular, the nature of luminescence excited in the transparency range of stishovite is
ascribed to a defect existing in the crystal after-growth. A similarity between stishovite luminescence and
that of oxygen-deficient silica glass and radiation induced luminescence of -quartz crystal presumes a
similar nature of the centers in those materials.
Central European Journal of Physics • 9(4) • 2011 • 1106-1113